Pla¬≠nar Atomic and Mol¬≠e¬≠c¬≠u¬≠lar Scale devices
Large-‚Äčscale inte¬≠grat¬≠ing project (IP) pro¬≠posal in FET Proac¬≠tive
ICT Call 10
FP7-‚ÄčICT-‚Äč2013 ‚Äď 10
1st Octo¬≠ber 2013 ‚Äď 30th Sep¬≠tem¬≠ber 2017
Coor¬≠di¬≠na¬≠tor CEMES-‚ÄčCNRS (France) /‚ÄčAndr√© Gour¬≠don
Euro¬≠pean Project Man¬≠ager: Marie Herv√©
Bud¬≠get: 9 188 726 ‚ā¨ ‚ÄĒ EU con¬≠tri¬≠bu¬≠tion 6 683 998 ‚ā¨
Con¬≠tract num¬≠ber 610446
Part¬≠ners: Fin¬≠land ‚Äď France ‚Äď Ger¬≠many ‚ÄĒ Poland‚Äď Spain ‚ÄĒ Switzerland
he PAMS project will explore all sci¬≠en¬≠tific and tech¬≠no¬≠log¬≠i¬≠cal aspects of the fab¬≠ri¬≠ca¬≠tion of pla¬≠nar atomic and sub-‚Äčmolecular scale elec¬≠tronic devices on sur¬≠faces of Si:H, Ge:H, AlN, CaCO3 (cal¬≠cite) and CaF2 with atomic scale pre¬≠ci¬≠sion and reproducibility.
The sub-‚Äčnanoscale devices will be made by com¬≠bin¬≠ing ultra-‚Äčprecise Scan¬≠ning Tun¬≠nel¬≠ing Microscopy (STM) and non-‚Äčcontact-‚ÄčAtomic Force Microscopy (NC-‚ÄčAFM) atomic and mol¬≠e¬≠c¬≠u¬≠lar manip¬≠u¬≠la¬≠tion, includ¬≠ing hydro¬≠gen extrac¬≠tion from pas¬≠si¬≠vated sur¬≠faces, con¬≠trolled local dop¬≠ing and on-‚Äčsurface chem¬≠i¬≠cal syn¬≠the¬≠sis of mol¬≠e¬≠c¬≠u¬≠lar devices and wires by cou¬≠pling of pre¬≠cur¬≠sors. PAMS will develop new solu¬≠tions to reli¬≠ably address sub-‚Äčnanometer scale devices from the human scale by devel¬≠op¬≠ing a new gen¬≠er¬≠a¬≠tion of low-‚Äčtemperature inter¬≠con¬≠nec¬≠tion and manip¬≠u¬≠la¬≠tion machines com¬≠pris¬≠ing four STM/‚ÄčNC-‚ÄčAFM heads with sub-‚Äč√Ö pre¬≠ci¬≠sion, allow¬≠ing for con¬≠tact¬≠ing nanopads con¬≠nected to dan¬≠gling bond nanowires, doped sil¬≠i¬≠con nanowires or mol¬≠e¬≠c¬≠u¬≠lar nanowires.
nder¬≠stand¬≠ing and opti¬≠miza¬≠tion of the elec¬≠tronic struc¬≠tures of these nanowires and of the con¬≠tacts between the var¬≠i¬≠ous com¬≠po¬≠nents of the pla¬≠nar device will be one of the cen¬≠tral objec¬≠tives. The atomic and mol¬≠e¬≠c¬≠u¬≠lar devices will include dan¬≠gling bond cir¬≠cuitries, func¬≠tion¬≠al¬≠ized by cou¬≠pling with organic mol¬≠e¬≠cules, and con¬≠trolled by remote alter¬≠ation of mol¬≠e¬≠c¬≠u¬≠lar states by local band bend¬≠ing; alter¬≠na¬≠tively multi-‚Äčbranch pol¬≠yaro¬≠matic log¬≠i¬≠cal gates will be syn¬≠the¬≠sized and addressed by up to four nanowires.
AMS will address the novel the¬≠o¬≠ret¬≠i¬≠cal chal¬≠lenges posed by these pla¬≠nar devices. Accord¬≠ingly, new method¬≠olog¬≠i¬≠cal tools will be devel¬≠oped, allow¬≠ing for a mul¬≠ti¬≠scale descrip¬≠tion (using from first-‚Äčprinciples to empir¬≠i¬≠cal force-‚Äčfields) of the struc¬≠tural, elec¬≠tronic and trans¬≠port prop¬≠er¬≠ties of such atomic and mol¬≠e¬≠c¬≠u¬≠lar devices, as well as their fab¬≠ri¬≠ca¬≠tion and char¬≠ac¬≠ter¬≠i¬≠za¬≠tion. These new the¬≠o¬≠ret¬≠i¬≠cal tools will ulti¬≠mately per¬≠mit us to opti¬≠mize the design and syn¬≠the¬≠sis of atomic and mol¬≠e¬≠c¬≠u¬≠lar gates.
Key-‚Äčwords: Pla¬≠nar atomic scale devices and tech¬≠nol¬≠ogy‚Äď The¬≠ory and sim¬≠u¬≠la¬≠tion of nano-‚Äčdevices ‚ÄĒ Remote address¬≠ing of nano-‚Äčdevices ‚ÄĒ On-‚Äčsurface syn¬≠the¬≠sis ‚ÄĒ Inter¬≠con¬≠nec¬≠tion machine ‚ÄĒ Sur¬≠faces of H:Si , H:Ge, AlN, CaCO3