Planar Atomic and Molecular Scale devices
Large-scale integrating project (IP) proposal in FET Proactive
ICT Call 10
FP7-ICT-2013 – 10
1st October 2013 – 30th September 2017
Coordinator CEMES-CNRS (France) /André Gourdon
European Project Manager: Marie Hervé
Budget: 9 188 726 € — EU contribution 6 683 998 €
Contract number 610446
Partners: Finland – France – Germany — Poland– Spain — Switzerland
he PAMS project will explore all scientific and technological aspects of the fabrication of planar atomic and sub-molecular scale electronic devices on surfaces of Si:H, Ge:H, AlN, CaCO3 (calcite) and CaF2 with atomic scale precision and reproducibility.
The sub-nanoscale devices will be made by combining ultra-precise Scanning Tunneling Microscopy (STM) and non-contact-Atomic Force Microscopy (NC-AFM) atomic and molecular manipulation, including hydrogen extraction from passivated surfaces, controlled local doping and on-surface chemical synthesis of molecular devices and wires by coupling of precursors. PAMS will develop new solutions to reliably address sub-nanometer scale devices from the human scale by developing a new generation of low-temperature interconnection and manipulation machines comprising four STM/NC-AFM heads with sub-Å precision, allowing for contacting nanopads connected to dangling bond nanowires, doped silicon nanowires or molecular nanowires.
nderstanding and optimization of the electronic structures of these nanowires and of the contacts between the various components of the planar device will be one of the central objectives. The atomic and molecular devices will include dangling bond circuitries, functionalized by coupling with organic molecules, and controlled by remote alteration of molecular states by local band bending; alternatively multi-branch polyaromatic logical gates will be synthesized and addressed by up to four nanowires.
AMS will address the novel theoretical challenges posed by these planar devices. Accordingly, new methodological tools will be developed, allowing for a multiscale description (using from first-principles to empirical force-fields) of the structural, electronic and transport properties of such atomic and molecular devices, as well as their fabrication and characterization. These new theoretical tools will ultimately permit us to optimize the design and synthesis of atomic and molecular gates.
Key-words: Planar atomic scale devices and technology– Theory and simulation of nano-devices — Remote addressing of nano-devices — On-surface synthesis — Interconnection machine — Surfaces of H:Si , H:Ge, AlN, CaCO3